switching diode dan222wm l applications l dimensions (unit : mm) l land size figure (unit : mm) high frequency switching l features 1)ultra small mold type. (emd3) 2)high reliability l construction l structure silicon epitaxial planer l absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v i fm ma io ma i surge a pd mw tj ? c tstg ? c l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions forward voltage v f - - 1.2 v i f =100ma reverse current i r - - 0.1 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr - - 4 ns v r =6v , i f =5ma , r l =50 reverse voltage (dc) 80 l taping dimensions (unit : mm) parameter limits reverse voltage (repetitive) 80 forward voltage(repetitive peak) 300 average rectified forward current 100 surge current(t=1s) 4 parameter capacitance between terminals reverse recovery time power dissipation 150 junction temperature 150 storage temperature - 55 to + 150 emd3 1.0 0.7 0.5 0.5 0.7 0.7 0.6 0.6 1.3 rohm : emd3 jeita : sc-75a jedec : sot-416 dot (year week factory) 1n 1/3 2011.10 - rev.a downloaded from: http:/// data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet dan222wm 0.01 0.1 1 10 100 0 0.5 1 forward voltage v f (v) v f -i f characteristics forward current:i f (ma) ta=125 c ta=75 c ta=25 c ta= - 25 c 0.01 0.1 1 10 100 1000 10000 0 20 40 60 80 reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics ta=25 c ta=75 c ta=125 c ta= - 25 c 0.1 1 10 0 10 20 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics f=1mhz 0.1 0.3 0.5 0.7 0.9 capacitance between terminals:ct(pf) ct dispersion map f=1mhz v r =6v n=30pcs ave:0.52pf 900 910 920 930 940 950 v f dispersion map forward voltage:v f (mv) ave:905.0 mv ta=25 c i f =100ma n=30pcs 0 5 10 15 20 25 30 35 40 45 50 reverse current:i r (na) i r dispersion map ta=25 c v r =70v n=30pcs ave:8.1na 2/3 2011.10 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet dan222wm 1 10 100 0.1 1 10 100 0 5 10 15 20 25 30 trr dispersion map reverse recovery time:trr(ns) ta=25 c i f =100ma i r =100ma irr=0.1*i r n=10pcs ave:19.0ns 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j- a) rth(j-c) time:t(s) rth-t characteristics transient thermal impedance:rth ( c/w) mounted on epoxy board 0 5 10 15 20 electrostatic discharge test esd(kv) esd dispersion map ave: 8.0kv c=100pf r=1.5k c=200pf r=0 ave: 1.6kv n=10pcs peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics t i fsm 0 1 2 3 4 5 1 10 100 8.3m s i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics 0 1 2 3 4 5 ave:2.5a i fsm dispersion map peak surge forward current:i fsm (a) 8.3ms i fsm 1cyc 3/3 2011.10 - rev.a downloaded from: http:///
r1120 a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes downloaded from: http:///
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